Job Description:

**Job Id** E1958412

**Job Title** Glass IPD Process NPI Engineer (Staff/Sr. Staff Engineer)

**Post Date** 09/20/2017

**Company-Division** Qualcomm Technologies, Inc.

CDMA Technology at http://www.qualcomm.com/about/businesses/qct

**Job Area** Engineering – Hardware

**Location** California – San Diego

**Job Overview** This position is required as a lead new product introduction engineer to work on the manufacturing ramp of advanced glass-IPD process for RF applications through the external foundries/OSATs. The job responsibility is as follows:

Lead to ramp up HVMs at suppliers driven by schedule, volume, capacity, and risk-mitigation.

Develop the accurate PCM design to monitor the process-readiness through product-shuttles.

Interface between customers specification and foundries Glass IPD process-flow.

Lead to enable second-source for assurance of the HVM capacity.

Budgetary for process-development (NRE) and plan to run test-chips for product-assessments.

Set the plans for the process-qualification to gauge the process-readiness.

Closely work with package team for FBEOL development for the product requirements.

Set the process roadmap to evolve Glass-IPD technology by the market-trend.

Explore the process-scaling of Glass-IPD from wafer-level to panel-level.

Lead to optimize the process-integration driven by higher performance, lower cost, and smaller form-factor.

All Qualcomm employees are expected to actively support diversity on their teams, and in the Company.

**Minimum Qualifications** 10+ years of industry experience in the following:

Experience to develop the customized BEOL/FBEOL processes for RF products and devices

Experience analyzing/improving the process-capability (CP/CPK) for RF devices (inductor and capacitor).

Experience with dielectric material characterization (dielectric constant, reliability, power-handling, BDV, ESD) for RF applications.

Experience with RF technologies, Glass IPD, SOI IPD, RF circuitry, RF PKG, or RF system

**Preferred Qualifications** Experience to control the process-variation/analysis from the development to HVM.

Material interface engineering including binary/tertiary phase-diagram and chemical reaction-activation process.

2D and 3D EM simulation for electrical and magnetic characterization.

Experiment and characterization of RF devices, RF circuitry, and RF modeling.

3D RF integration through SIP and CPI (Chip and Package interaction)

Dielectric material (glass, polymer ILD, MIM dielectric) characterization for RF application.

Material interface adhesion characteristics modeling and characterization methodology development.

Develop organic (substrate) + inorganic (MIM, glass) panel manufacturing process flow

**Education Requirements** Master’s or PhD in Electrical Engineering required.


**EEO employer: including race, gender, gender identity, sexual orientation, disability & veterans status.**

About Qualcomm

Who is Qualcomm, and what do we do? We are engineers, scientists and business strategists. We are from many different countries and speak many different languages. We come from diverse cultures and have unique perspectives. Together, we focus on a single goal—invent mobile technology breakthroughs.